Thermal processing of oxide-compound semiconductor structures

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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438608, 438767, H01L21/28

Patent

active

059021306

ABSTRACT:
A method of thermal processing a supporting structure comprised of various compound semiconductor layers having a Gd free Ga.sub.2 O.sub.3 surface layer including coating the surface layer with a dielectric or a metallic cap layer or combinations thereof, such that the low D.sub.it Ga.sub.2 O.sub.3 -compound semiconductor structure is conserved during thermal processing, e.g. during activation of ion implants of a self aligned metal-oxide-compound semiconductor gate structure. In a preferred embodiment, the semiconductor structure has a surface of GaAs, the Gd free Ga.sub.2 O.sub.3 layer has a thickness in a range of approximately 1 nm to 20 nm, and the insulating or metallic cap layer has a thickness in a range of approximately 1 nm to 500 nm.

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patent: 5665658 (1997-09-01), Passlack

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