Thermal post-deposition treatment of halogen-doped films to impr

Details Thermal post-deposition treatment of halogen-doped films to impr Thermal post-deposition treatment of halogen-doped films to impr

1998-04-24

2000-06-27

Lund, Jeffrie R

Coating apparatus

Gas or vapor deposition

Multizone chamber

118725, 36446828, C23C 1600, G06F 1900

Patent

active

060793546

ABSTRACT:
A method of stabilizing a halogen-doped silicon oxide film to reduce halogen atoms migrating from said film during subsequent processing steps. A halogen-doped film is deposited over a substrate and then subjected to a degassing step in which the film is briefly heated to a temperature of between about 300 and 550.degree. C. before deposition of a diffusion barrier layer. It is believed that such a heat treatment step removes loosely bonded halogen atoms from the halogen-doped film and thus the treatment is referred to as a degassing step. In a preferred version of this embodiment, the halogen-doped silicon oxide film is an FSG film that is subjected to a degassing treatment for between about 35 and 50 seconds.

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