Thermal modulation of implant process

Details Thermal modulation of implant process Thermal modulation of implant process

2011-01-11

2011-01-11

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492200, C250S492300, C250S443100, C438S530000

Reexamination Certificate

active

07868306

ABSTRACT:
A method for ion implantation is disclosed which includes modulating the temperature of the substrate during the implant process. This modulation affects the properties of the substrate, and can be used to minimize EOR defects, selectively segregate and diffuse out secondary dopants, maximize or minimize the amorphous region, and vary other semiconductor parameters. In one particular embodiment, a combination of temperature modulated ion implants are used. Ion implantation at higher temperatures is used in sequence with regular baseline processing and with ion implantation at cold temperatures. The temperature modulation could be at the beginning or at the end of the process to alleviate the detrimental secondary dopant effects.

REFERENCES:
patent: 2008/0038908 (2008-02-01), Henley
patent: 2010/0084577 (2010-04-01), Hatem et al.

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