Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-08-13
1993-11-02
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257259, 257262, 257287, 257343, H01L 2701, H01L 2900, H01L 2978
Patent
active
052586383
ABSTRACT:
A layout of a MOSFET current driver is disclosed which improves the fabrication yield and the current drive capability over that of the prior art while keeping the layout area the same as the prior art. In this design, the gate is laid out to have a lateral serpentine pattern rather than a vertical serpentine pattern to create a larger gate in order to improve the current drive capability. In addition, the contacts for the drain and the contacts for the source are removed from the gate layout area which facilitates condensing the gate layout and increasing the size of the gate. Also, this design has only two metal strips: one for the drain and one for the source of the MOSFET current driver. The two metal strips substantially overlap the serpentine patterned gate. Having only two metal strips reduces the spaces between the metal strips to one space thereby reducing the probability of having a short or a defect and improving the fabrication yield.
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patent: 4025940 (1979-05-01), Kimura et al.
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Buhler Steven A.
ElHatem Abdul M.
James Andrew J.
Rad Fariba
Wu Alice Hsuanchen
Xerox Corporation
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