Thermal ink jet power MOS device design/layout

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257259, 257262, 257287, 257343, H01L 2701, H01L 2900, H01L 2978

Patent

active

052586383

ABSTRACT:
A layout of a MOSFET current driver is disclosed which improves the fabrication yield and the current drive capability over that of the prior art while keeping the layout area the same as the prior art. In this design, the gate is laid out to have a lateral serpentine pattern rather than a vertical serpentine pattern to create a larger gate in order to improve the current drive capability. In addition, the contacts for the drain and the contacts for the source are removed from the gate layout area which facilitates condensing the gate layout and increasing the size of the gate. Also, this design has only two metal strips: one for the drain and one for the source of the MOSFET current driver. The two metal strips substantially overlap the serpentine patterned gate. Having only two metal strips reduces the spaces between the metal strips to one space thereby reducing the probability of having a short or a defect and improving the fabrication yield.

REFERENCES:
patent: 3414781 (1968-12-01), Dill
patent: 3449648 (1969-06-01), Beale et al.
patent: 3586930 (1971-06-01), Das
patent: 3643139 (1972-02-01), Nienhuls
patent: 4025940 (1979-05-01), Kimura et al.
patent: 4462041 (1984-07-01), Glen
patent: 4684965 (1987-08-01), Tajima et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Thermal ink jet power MOS device design/layout does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thermal ink jet power MOS device design/layout, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thermal ink jet power MOS device design/layout will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1759668

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.