Thermal gradient control for enhanced laser induced crystallizat

Details Thermal gradient control for enhanced laser induced crystallizat Thermal gradient control for enhanced laser induced crystallizat

1980-08-28

1982-05-18

Clements, Gregory N.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156603, 156DIG80, 156DIG88, 156DIG102, C30B 1306

Patent

active

043303633

ABSTRACT:
A method for laser induced conversion of large predefined areas of amorphous or polycrystalline semiconductor material, disposed nonepitaxially upon a substrate, into large single crystal areas, by controlling the lateral heat flow out of the melted regions of the areas for causing their recrystallization from a single nucleation site and for suppressing the formation of competitive nucleation sites at their edges.

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patent: 3600237 (1971-08-01), Davis et al.
patent: 3737739 (1973-06-01), Blakeslee et al.
patent: 3764776 (1973-10-01), Hierholzer et al.
patent: 4199397 (1980-04-01), Gurtler
Gibbons et al., "Laser Recrystallization", published in Appl. Phys. Lett., 34(12), 15 Jun. 1979, pp. 831-833.
Geis et al., "Crystallographic Orientation", published in Appl. Phys. Lett., 35(1), 1 Jul. 1979, pp. 71-74.
Fan et al., "Crystallization of Amorphous Silicon", published in Appl. Phys. Lett., 27(4), 15 Aug. 1975, pp. 224-226.
Takagi et al., "Crystal Growth", published in J. of Material Science, 12(3), Mar. 1977, pp. 517-521.

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