Thermal electric NAND gate

Details Thermal electric NAND gate Thermal electric NAND gate

2008-11-13

2009-10-13

Tran, Anh Q (Department: 2819)

Electronic digital logic circuitry

Function of and, or, nand, nor, or not

C326S007000, C326S136000

Reexamination Certificate

active

07602218

ABSTRACT:
A thermal electric (TE) binary NAND gate logic circuit is provided with a method for NAND logic gating. The method accepts a first input voltage representing an input binary logic state and generates a first thermal electric (TE) temperature in response to the first input voltage. A second input voltage is accepted representing an input binary logic state, and a second TE temperature is generated in response to the second input voltage. In response to the first and second TE temperatures, a NAND logic state output voltage is generated. More explicitly, a first control voltage is generated in response to the first TE temperature, and a second control voltage is generated in response to the second TE temperature. Then, a third TE temperature is generated in response to the first and second control voltages, which in turn generates the output voltage.

REFERENCES:
patent: 3461272 (1969-08-01), Hirsbrunner
patent: 3548293 (1970-12-01), Hirsbrunner

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