Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2011-07-12
2011-07-12
Tran, Binh (Department: 1713)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S717000, C438S722000, C438S743000
Reexamination Certificate
active
07977246
ABSTRACT:
A thermal anneal process for preventing formation of certain BPSG surface defects following an etch or silicon clean step using a fluorine and hydrogen chemistry. The thermal anneal process is carried out while protecting the wafer from moisture, by heating the wafer to a sufficiently high temperature for a sufficient duration of time to thermally diffuse boron and/or phosphorus materials separated from silicon near the surface of the doped glass layer into the bulk of the layer. The thermal anneal process is completed by cooling the wafer to a sufficiently low temperature to fix the distribution of the boron and/or phosphorus materials in bulk of the doped glass layer.
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Chang Mei
Kao Chien-Teh
Lu Xinliang
Yang Haichun
Applied Materials Inc.
Tran Binh
Wallace Robert M.
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