Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-03-10
1998-09-01
Dutton, Brian
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438653, 438655, 438680, 438685, H01L 214763, H01L 2144
Patent
active
058010971
ABSTRACT:
A thermal annealing method for forming a nitride layer within an integrated circuit. There is first provided a substrate. There is then formed over the substrate a nitride forming material layer. The nitride forming material layer is then annealed through a thermal annealing method in the presence of an atmosphere of activated nitrogen to yield a nitride layer. The method is particularly useful for forming titanium nitride barrier layers and titanium nitride adhesion promoter layers within integrated circuits.
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"Advanced Inorganic Chemistry--A Comprehensive Test" by Cotton and Wilkinson, Interscience Publishers, New York, NY, 1972, p. 346.
Ackerman Stephen B.
Dutton Brian
Saile George O.
Szecsy Alek P.
Vanguard International Semiconductor Corporation
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