Thermal anneal process for strained-Si devices

Details Thermal anneal process for strained-Si devices Thermal anneal process for strained-Si devices

2006-08-29

2006-08-29

Abraham, Fetsum (Department: 2826)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S502000, C438S509000, C438S514000

Reexamination Certificate

active

07098119

ABSTRACT:
A method is disclosed for forming a semiconductor device using strained silicon. After forming a first substrate material with a first natural lattice constant on a device substrate and a second substrate material with a second natural lattice constant on the first substrate material, a channel, source and drain regions of a field effective transistor are further defined using the first and second substrate materials. After implanting one or more impurity materials to the source and drain regions, and the transistor goes through an annealing process using a high speed heat source other than a Tungsten-Halogen lamp.

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