TFT with body contacts

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S243000, C257S288000, C257S327000, C257S335000

Reexamination Certificate

active

07038276

ABSTRACT:
A thin-film transistor (TFT) with body contacts is disclosed. It is used in polysilicon TFT LCD's. A body contact region for separating the gate electrode, a source region, and a drain region is made in the TFT. Through the dopants in the body contact region and different impurities in the source region and the drain region, a body-trigger bias is imposed on the body of the TFT. This method reduces the threshold voltage of the TFT driving circuit, thereby increasing the driving current.

REFERENCES:
patent: 6414353 (2002-07-01), Maeda et al.
patent: 6608613 (2003-08-01), Koyama et al.

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