Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-06-07
2011-06-07
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S149000, C438S158000, C257SE21370, C257SE21415, C257SE21143
Reexamination Certificate
active
07955911
ABSTRACT:
A thin film transistor liquid crystal display (TFT-LCD) pixel unit and a method for manufacturing the same. The pixel unit comprises a gate line and a gate electrode formed on a substrate and a first gate insulating layer, an active layer, and a doped layer that are sequentially formed on the gate line and the gate electrode. An intercepting trench is formed on the gate line to cut off the doped layer and the active layer on the gate line. A second insulating layer covers the intercepting trench and the substrate where the gate line and the gate electrode are not formed. A pixel electrode is formed on the second insulating layer and a part of the pixel electrode overlaps one of a source and drain electrodes.
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U.S. Appl. No. 12/104,575, filed Apr. 17, 2008, Xinxin Li.
Chen Xu
Min Tae Yup
Qiu Haijun
Wang Zhangtao
Beijing Boe Optoelectronics Technology Co., Ltd.
Garber Charles D
Hasse & Nesbitt LLC
Nesbitt Daniel F.
Sene Pape
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