Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-05-23
2009-12-22
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S736000, C257SE21023
Reexamination Certificate
active
07635616
ABSTRACT:
A TFT LCD array substrate and a manufacturing method thereof. The TFT LCD array substrate includes a substrate and a pixel array on the substrate. Each pixel has: a gate line and a gate electrode formed on the substrate; a gate insulating layer formed on the gate line and the gate electrode; a semiconductor layer formed on the gate insulating layer disposed on the gate electrode; an ohmic contact layer having two parts, which are disposed on two sides of the semiconductor layer respectively and are apart from one another; an isolation insulating dielectric layer covering the substrate and the gate insulating layer except a portion on which the semiconductor layer is formed; a pixel electrode formed on the isolation insulating dielectric layer and the ohmic contact layer over the semiconductor layer; a source/drain electrode formed on the pixel electrode over the ohmic contact layer, and a passivation layer at least covering the semiconductor layer. The TFT LCD array substrate can be manufactured with a 3Mask technology, thereby the process steps are reduced and the utilization ratio of the equipment is improved.
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Deng Chaoyong
Rim Seung Moo
BOE Optoelectronics Technology Co., Ltd.
Choi Calvin
Hasse & Nesbitt LLC
Mulpuri Savitri
Nesbitt Daniel F.
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