TFT fabrication process

Details TFT fabrication process TFT fabrication process

2006-03-08

2009-06-30

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257SE51007

Reexamination Certificate

active

07553706

ABSTRACT:
A process for fabricating a thin film transistor including: (a) depositing a semiconductor layer; and (b) depositing a multilayer gate dielectric prior to or subsequent to the depositing the semiconductor layer, wherein the multilayer dielectric comprises: (i) a first layer comprising a first material selected from the group consisting of an optionally substituted silsesquioxane, an optionally substituted silsesquioxane-metal oxide hybrid composition, an optionally substituted siloxane-metal oxide hybrid composition, and a mixture thereof, and (ii) a second layer in contact with the first layer, wherein the second layer comprises a second material, wherein the first layer is closer to the semiconductor layer than the second layer.

REFERENCES:
patent: 5549934 (1996-08-01), Garza et al.
patent: 5705826 (1998-01-01), Aratani et al.
patent: 6222225 (2001-04-01), Nakamura et al.
patent: 6300988 (2001-10-01), Ishihara et al.
patent: 6319794 (2001-11-01), Akatsu et al.
patent: 6323106 (2001-11-01), Huang et al.
patent: 6433359 (2002-08-01), Kelley et al.
patent: 6448606 (2002-09-01), Yu et al.
patent: 6461936 (2002-10-01), von Ehrenwall
patent: 6576199 (2003-06-01), Liu et al.
patent: 6621099 (2003-09-01), Ong et al.
patent: 6649472 (2003-11-01), Hsieh
patent: 6723617 (2004-04-01), Choi
patent: 6740900 (2004-05-01), Hirai
patent: 6743675 (2004-06-01), Ding
patent: 6774393 (2004-08-01), Murti et al.
patent: 6849870 (2005-02-01), Koo et al.
patent: 6855949 (2005-02-01), De Leeuw et al.
patent: 6891237 (2005-05-01), Bao et al.
patent: 6893921 (2005-05-01), Ding
patent: 6905906 (2005-06-01), Sirringhaus et al.
patent: 6936190 (2005-08-01), Yoshida
patent: 6974755 (2005-12-01), Ko et al.
patent: 7091091 (2006-08-01), Ding
patent: 7122866 (2006-10-01), Arai et al.
patent: 7259074 (2007-08-01), Jung et al.
patent: 2003/0073291 (2003-04-01), Tseng
patent: 2003/0102471 (2003-06-01), Kelley et al.
patent: 2003/0102472 (2003-06-01), Kelley et al.
patent: 2003/0124800 (2003-07-01), Park et al.
patent: 2003/0146466 (2003-08-01), Ku
patent: 2003/0160230 (2003-08-01), Ong et al.
patent: 2003/0160234 (2003-08-01), Ong et al.
patent: 2004/0061165 (2004-04-01), Ding
patent: 2004/0065937 (2004-04-01), Hsiao
patent: 2004/0097080 (2004-05-01), Kim et al.
patent: 2004/0201059 (2004-10-01), Ding
patent: 2004/0222412 (2004-11-01), Bai et al.
patent: 2004/0263739 (2004-12-01), Sirringhaus et al.
patent: 2005/0001210 (2005-01-01), Lee et al.
patent: 2005/0009248 (2005-01-01), Weng et al.
patent: 2005/0062091 (2005-03-01), Ding
patent: 2005/0287741 (2005-12-01), Ding
patent: 2006/0113523 (2006-06-01), Kubota et al.
patent: 2006/0214154 (2006-09-01), Yang et al.
patent: 2007/0026651 (2007-02-01), Leam et al.
patent: 2007/0042548 (2007-02-01), Noh et al.
patent: WO 03/052841 (2003-06-01), None
Silsesquioxane Resins as High-Performance Solution Processible Dielectric Materials for Organic Transistor Applications, Bao et al.
Hybrid organic-inorganic materials by nonhydrolytic Sol-Gel processes: Organosilsesquioxane-metal oxide hybrids, Crouzet et al., Journal of Sol-Gel Science and Technology 26, 335-338,2003.
Yiliang Wu et al., U.S. Appl. No. 10/982,472, filed Nov. 5, 2004, titled Dielectric Materials for Electronic Devices.
Yiliang Wu et al., U.S. Appl. No. 11/104,730, filed Apr. 13, 2005, titled TFT Gate Dielectric With Crosslinked Polymer.
F. Garnier et al., “All-Polymer Field-Effect Transistor Realized by Printing Techniques,” Science, vol. 265, pp. 1684-1686 (Sep. 16, 1994).
S.Y. Park et al., “Cooperative polymer gate dielectrics in organic thin-film transistors,” Appl. Phys. Lett., vol. 85, No. 12, pp. 2283-2285 (Sep. 20, 2004).
F. Garnier et. al., “Molecular Engineering of Organic Semiconductors: Design of Self-Assembly Properties in Conjugated Thiophene Oligomers,” J. Am. Chem. Soc., vol. 115, pp. 8716-8721 (1993).
M. Halik et al., “Fully patterned all-organic thin film transistors,” Appl. Phys. Lett., vol. 81, No. 2, pp. 289-281 (Jul. 8, 2002).
R. Schroeder et. al., “A study of the threshold voltage in pentacene organic field-effect transistors,” Appl. Phys. Lett., vol. 83, No. 15, pp. 3201-3203 (Oct. 13, 2003).
Z. Bao et. al., “Silsesquioxane Resins as High-Performance Solution Processible Dielectric Materials for Organic Transistor Applications,” Adv. Funct. Mater., vol. 12, No. 8, pp. 1-6 (Aug. 2002).
J. Veres et al., “Gate Insulators in Organic Field-Effect Transistors,” Chem. Mater. 2004, vol. 16, pp. 4543-4555 (published on web Sep. 11, 2004).
Lay-Lay Chua et. al., “High-stability ultrathin spin-on benzocyclobutene gate dielectric for polymer field-effect transistors,” Appl. Phys. Lett., vol. 84, No. 17, pp. 3400-3402 (Apr. 26, 2004).
J. Park et. al., “A polymer gate dielectric for high-mobility polymer thin-film transistors and solvent effects,” Appl. Phys. Lett., vol. 85, No. 15, pp. 3283-3285 (Oct. 11, 2004).
Z. Turzynski et al., “Influence of diffusion and induced p-bonds on the ultra-violet radiation-initiated crosslinking of polystyrene in solution,” Polymer, vol. 31, pp. 1500-1506 (Aug. 1990).
K. Kato, Effect of Molecular Weight on Changes Produced in the Surface Layer of Polystyrene Film in a Nitrogen Atmosphere by Ultraviolet Irradiation, “Journal of Applied Polymer Science,” vol. 13, pp. 599-606 (1969).

Affiliated with

Also associated with

Rating

TFT fabrication process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with TFT fabrication process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and TFT fabrication process will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4115569