Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-04-19
2011-04-19
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257SE27001
Reexamination Certificate
active
07928441
ABSTRACT:
Disclosed is display part such as a TFT array panel comprising an aluminum layer, and a molybdenum layer formed on the aluminum layer. The thickness of the molybdenum layer may be about 10% to about 40% the thickness of the aluminum layer. As a result, a top surface of the aluminum layer may have a width about equal to a bottom surface of the molybdenum layer.Accordingly, it is an aspect of the present invention to provide a TFT array panel comprising an aluminum wiring on which aluminum protrusion is reduced or eliminated.
REFERENCES:
patent: 6081308 (2000-06-01), Jeong et al.
patent: 7173683 (2007-02-01), Hur et al.
patent: 2002/0013021 (2002-01-01), Jeong et al.
patent: 2002/0044228 (2002-04-01), Oh et al.
patent: 2003/0160252 (2003-08-01), Jeong et al.
patent: 2004/0140566 (2004-07-01), Jeong et al.
patent: 2000-0003179 (2000-01-01), None
patent: 2002-0328395 (2002-11-01), None
Bae Yang-bo
Cho Beom-Seok
Jeong Chang-ob
Kim Jin-kwan
Lee Je-Hun
Ho Anthony
Innovation Counsel LLP
Lee Eugene
Samsung Electronics Co,. Ltd.
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