Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1996-09-16
1998-05-19
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257296, 257301, 257502, 257505, 257506, 257520, H01L 2900
Patent
active
057539626
ABSTRACT:
A method of forming field oxide during the manufacture of a semiconductor device comprises the steps of providing a semiconductor wafer having a plurality of recesses or trenches therein. A layer of texturized polycrystalline silicon is formed within the recesses, which is subsequently oxidized to form field oxide. The instant method reduces stress imparted to the die as the texturized polycrystalline silicon has voids or holes which absorb the expanding volume as the silicon is oxidized to form field oxide.
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Crane Sara W.
Micro)n Technology, Inc.
Wille Douglas A.
LandOfFree
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