Testing method for semiconductor device, testing apparatus...

Details Testing method for semiconductor device, testing apparatus... Testing method for semiconductor device, testing apparatus...

2007-01-18

2008-12-16

Berman, Jack I. (Department: 2881)

Radiant energy

Inspection of solids or liquids by charged particles

Electron microscope type

C250S306000, C250S307000

Reexamination Certificate

active

07465923

ABSTRACT:
The present invention relates to a method of testing, in the manufacturing process of an LSI (large scale integration) device, a result apparatus therefor, and a cross-sectional microstructure of the LSI device. The method includes thinning a semiconductor chip such that the semiconductor chip includes a substrate crystal and a portion added by the manufacturing process, irradiating an electron beam to the semiconductor chip, detecting an electron beam transmitted through the semiconductor chip to thereby obtain an electron beam diffraction image, removing an electron beam diffracted due to the substrate crystal, and comparing, in the electron beam diffraction image, the thickness of grating stripes obtained from the substrate crystal with the thickness of the portion added by the manufacturing process.

REFERENCES:
patent: 6531697 (2003-03-01), Nakamura et al.
patent: 2004/0158409 (2004-08-01), Teshima et al.
patent: 61-110954 (1986-05-01), None
patent: 5-217536 (1993-08-01), None
patent: 6-139988 (1994-05-01), None
patent: 8-5528 (1996-01-01), None
patent: 2003-14667 (2003-01-01), None
patent: 2004-22318 (2004-01-01), None

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