Testing for operating life of a memory device with address...

Electrical computers and digital processing systems: memory – Address formation – Generating a particular pattern/sequence of addresses

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C711S103000, C714S702000, C714S718000, C365S230030, C365S230060

Reexamination Certificate

active

10791417

ABSTRACT:
In a method and system for cycling through addresses of a memory device, a respective bit pattern comprised of a predetermined number of bits is generated for each address. The respective bit pattern for each of the addresses is cycled through with a transition of less than the predetermined number of bits for sequencing to each subsequent address. For example, the respective bit pattern for each of the addresses is cycled through in a gray code sequence. By limiting the number of transitions in the address bits, charge gain failure of a flash memory device is minimized and even may be eliminated.

REFERENCES:
patent: 5276647 (1994-01-01), Matsui et al.
patent: 5375091 (1994-12-01), Berry et al.
patent: 5446741 (1995-08-01), Boldt et al.
patent: 5450363 (1995-09-01), Christopherson et al.
patent: 5570317 (1996-10-01), Rosen et al.
patent: 5630086 (1997-05-01), Marietta et al.
patent: H1741 (1998-07-01), Cruts
patent: 5872449 (1999-02-01), Gouravaram et al.
patent: 5883844 (1999-03-01), So
patent: 5987574 (1999-11-01), Paluch
patent: 6308249 (2001-10-01), Okazawa
patent: 6549479 (2003-04-01), Blodgett
patent: 6894937 (2005-05-01), Garni et al.
patent: 6965526 (2005-11-01), Cavaleri et al.
patent: 7076710 (2006-07-01), Knips et al.
Lee et al. “Mobile Ion-Induced Data Retention Failure in NOR Flash Memory Cells”, Jun. 2001, IEE Transactions on Device and Materials Reliability, vol. 1, No. 2, pp. 128-132.
Brand et al., “Novel Read Disturb Failure Mechanism Induced by FLASH Cycling”, 1993, Reliability Physics Symposium, 31st Annual Proceedings, IEEE International, pp. 127-132.
Fastow et al., “Bake Induced Charge Gain in NOR Flash Cells”, Apr. 2000, IEEE Electronic Device Letters, vol. 21, No. 4, pp. 184-186.
Hakenes et al., “A Segmented Gray Code for Low-Power Microcontroller Address Buses”, 1999, Proceedings of the 25th EUROMICRO Conference, IEEE, pp. 1-4.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Testing for operating life of a memory device with address... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Testing for operating life of a memory device with address..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Testing for operating life of a memory device with address... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3841522

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.