Testing a memory device having field effect transistors...

Details Testing a memory device having field effect transistors... Testing a memory device having field effect transistors...

2011-01-18

2011-01-18

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Read/write circuit

Testing

C365S154000, C365S189070

Reexamination Certificate

active

07872930

ABSTRACT:
A supply voltage is set for a memory device at a first supply voltage level. Test data is written to the memory device at the first supply voltage level in response to setting the supply voltage. The supply voltage is decreased for the memory device to a second supply voltage level below the first supply voltage level in response to writing the test data. The test data is read from the memory device at the second supply voltage level in response to decreasing the supply voltage. The supply voltage is increased for the memory device to a third supply voltage level above the second supply voltage level in response to reading the test data. The test data is read from the memory device at the third supply voltage level in response to increasing the supply voltage. The test data written to the memory device at the first supply voltage level is compared to the test data read from the memory device at the third supply voltage level in response to reading the test data from the memory device at the third supply voltage level.

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International Search Report-PCT/US09/044171, International Search Authority-European Patent Offices-Aug. 5, 2009.
Written Opinion-PCT/US09/044171, International Search Authority-European Patent Office-Aug. 5, 2009.

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