Test structure of semiconductor device

Details Test structure of semiconductor device Test structure of semiconductor device

2008-01-08

2008-01-08

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

C438S017000, C438S018000, C257SE21521, C257SE21522

Reexamination Certificate

active

11218397

ABSTRACT:
A test structure of a semiconductor device is provided. The test structure includes a semiconductor substrate, a transistor which includes a gate electrode formed on first and second active regions defined within the semiconductor substrate, and first and second junction regions which are arranged at both sidewalls of the gate electrode to reside within the first and second active regions and are silicided, and first and second pads through which electrical signals are applied to the silicided first and second junction regions and detected and which are formed on the same level as the gate electrode or the semiconductor substrate.

REFERENCES:
patent: 6586837 (2003-07-01), Suguro
patent: 2002/0109196 (2002-08-01), Fujisawa et al.

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