Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2005-02-15
2005-02-15
Elms, Richard (Department: 2824)
Static information storage and retrieval
Read/write circuit
Testing
C365S149000, C365S199000
Reexamination Certificate
active
06856562
ABSTRACT:
A test structure for determining the resistance of a conducting junction between an active region of a selection transistor and a storage capacitor in a matrix-type cell array where the active regions of the selection transistors are in rows in a first direction and the storage capacitors are in rows in a second direction running perpendicular to the first direction. The conducting junctions between the active regions of the selection transistors and the storage capacitors are formed at overlapping areas of the mutually perpendicular rows each in a single edge region of the overlapping area in the first direction. The active regions of the selection transistors and/or the storage capacitors are connected by tunnel structures or bridge structures in the second direction in the region adjoining the junction to be measured between the active region of the selection transistor and the storage capacitor. This achieves a low-impedance connection to the junction to be measured.
REFERENCES:
patent: 5638331 (1997-06-01), Cha et al.
patent: 6426526 (2002-07-01), Divakaruni et al.
Felber Andreas
Lachenmann Susanne
Rosskopf Valentin
Sukman Sibina
Elms Richard
Infineon - Technologies AG
Luu Pho M.
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