Test structure for high precision analysis of a semiconductor

Details Test structure for high precision analysis of a semiconductor Test structure for high precision analysis of a semiconductor

2005-03-29

2005-03-29

Elms, Richard (Department: 2824)

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

C257S048000, C438S014000, C438S017000

Reexamination Certificate

active

06872583

ABSTRACT:
Semiconductor chip design and analysis is enhanced by using a dummy structure for analyzing a test structure in a test chip. According to an example embodiment of the present invention, a dummy structure is formed having structure that is about identical to that of test structure in a test chip. The parasitic capacitance of the dummy structure is determined and used to analyze the test structure. In this manner, the parasitic capacitance associated with the test structure can be accounted for, enhancing the ability to design, test, and debug semiconductor chips.

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IBM Technical Disclosure Bulletin, NA83045736, Multi-Chip Probe Card for Capacitance Voltage Measurements, Apr. 1983.*
J. Olowolafe, C-V Profiles, Wiley Encyclopedia of Electrical and Electronics Engineering Online, (Wiley & Sons, 1999).

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