Test structure for detecting bridging of DRAM capacitors

Static information storage and retrieval – Read/write circuit – Testing

Reexamination Certificate

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C365S223000

Reexamination Certificate

active

06934206

ABSTRACT:
A new method is provided for the interconnection of bit lines in the test structure. The invention provides for the creation of a cross comb bit line design in the test structure which allows for the detection and identification of diagonal or horizontal bridging between two identifiable capacitors of DRAM structures.

REFERENCES:
patent: 5377152 (1994-12-01), Kushiyama et al.
patent: 6046946 (2000-04-01), Nadeau-Dostie et al.
patent: 6191985 (2001-02-01), Gratz et al.
patent: 6208572 (2001-03-01), Adams et al.
patent: 6388927 (2002-05-01), Churchill et al.

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