Test structure for a single-sided buried strap DRAM memory...

Details Test structure for a single-sided buried strap DRAM memory... Test structure for a single-sided buried strap DRAM memory...

2006-10-24

2006-10-24

Graybill, David E. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

C257S296000, C257S301000, C257S905000, C257S908000, C257SE27097, C257SE27092

Reexamination Certificate

active

07126154

ABSTRACT:
A test structure for determining the electrical properties of a memory cell in a matrix-like cell array constructed on the basis of the single-sided buried strap concept has a connection between internal electrodes in the storage capacitors in two adjacent memory cells in the direction of the row of active regions in order to produce a series circuit. A first selection transistor and a first storage capacitor in a first memory cell and a second selection transistor and a second storage capacitor in a second memory cell, the active regions of the first and second selection transistors not being connected between the first and second selection transistors via a contact-making bit line.

REFERENCES:
patent: 6310361 (2001-10-01), Lichter
patent: 6339228 (2002-01-01), Iyer et al.
patent: 6459113 (2002-10-01), Morihara et al.
patent: 6469335 (2002-10-01), Hofmann
patent: 2002/0028550 (2002-03-01), Morihara et al.
patent: 2002/0195669 (2002-12-01), Morihara et al.

Affiliated with

Also associated with

Rating

Test structure for a single-sided buried strap DRAM memory... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Test structure for a single-sided buried strap DRAM memory..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Test structure for a single-sided buried strap DRAM memory... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3639405