Test structure and method for determining metal-oxide-silicon fi

Details Test structure and method for determining metal-oxide-silicon fi Test structure and method for determining metal-oxide-silicon fi

1995-12-15

1998-06-30

Picardat, Kevin

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

438 14, 438 18, H01L 2166

Patent

active

057733171

ABSTRACT:
The use of a test chip having a wide channel MOSFETs of different channel widths and effective gate lengths allows for an experimental determination of the fringe capacitance per unit width. The use of channel widths greater than 100 microns increases the accuracy of the measured capacitance values.

REFERENCES:
patent: 4978627 (1990-12-01), Liu et al.
patent: 4994736 (1991-02-01), Davis et al.
patent: 5206598 (1993-04-01), Yokoyama
patent: 5217907 (1993-06-01), Bulucea et al.

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