Test structure and method for detecting via contact shorting...

Details Test structure and method for detecting via contact shorting... Test structure and method for detecting via contact shorting...

2006-09-05

2008-08-26

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S270000, C438S680000, C257SE21170, C257SE21278, C257SE21521, C257SE21585

Reexamination Certificate

active

07416986

ABSTRACT:
A test structure for detecting void formation in semiconductor device layers includes a plurality of active device areas formed in a substrate, a plurality of shallow trench isolation (STI) regions separating the active device areas, a plurality of gate electrode structures formed across the active device areas and the STI regions, and a matrix of vias formed over the active device areas and between the gate electrode structures. At least one edge of each of a pair of vias at opposite ends of a given one of the STI regions extends at least out to an edge of the associated active device area.

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