Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor
Reexamination Certificate
2005-05-03
2005-05-03
Cuneo, Kamand (Department: 2829)
Electricity: measuring and testing
Measuring, testing, or sensing electricity, per se
With rotor
C324S754090
Reexamination Certificate
active
06888344
ABSTRACT:
A test probe for semiconductor devices, the test probe having a tip portion which is pressed against a test pad of a semiconductor device to establish electrical contact between the tip portion and the pad for testing the operation of the semiconductor device, wherein the probe is formed to have a tip shape with an angle of not less than 15 degrees formed at the surface of the pad between a tangential line with respect to a tip face of the probe and the pad surface when the probe is pressed against the pad, the tip shape of the probe having a spherical surface meeting the relationship of:in-line-formulae description="In-line Formulae" end="lead"?θ=cos−1(1−t/R)≧15°in-line-formulae description="In-line Formulae" end="tail"?where the radius of curvature of the spherical surface is R, the thickness of the pad is t, and the angle formed at the pad surface between the tangential line with respect to the probe tip face and the pad surface when the probe is pressed against the pad is θ, the probe have a flat portion at an end of the tip portion. Accordingly, a contact surface can be established between the probe trip and the pad with a sufficient degree of electrical continuity, and when the the probe level is adjusted in the probing, a time required for positioning the probe prior to the start of measurement is cut down and variation in measurement are reduced.
REFERENCES:
patent: 3607607 (1971-09-01), Beninga
patent: 3628144 (1971-12-01), Aronstein et al.
patent: 3676776 (1972-07-01), Bauer et al.
patent: 3882597 (1975-05-01), Chayka et al.
patent: 4481467 (1984-11-01), Alexandersen et al.
patent: 4547923 (1985-10-01), DeVries et al.
patent: 4590422 (1986-05-01), Milligan
patent: 4993957 (1991-02-01), Shino
patent: 5060051 (1991-10-01), Usuda
patent: 5090118 (1992-02-01), Kwon et al.
patent: 5225037 (1993-07-01), Elder et al.
patent: 5486279 (1996-01-01), Friese et al.
patent: 5603876 (1997-02-01), Honma et al.
patent: 5695386 (1997-12-01), Ryoke et al.
patent: 5961728 (1999-10-01), Kiser et al.
patent: 5968282 (1999-10-01), Yamasaka
patent: 6056627 (2000-05-01), Mizuta
patent: 6118289 (2000-09-01), Kitani et al.
patent: 6130104 (2000-10-01), Yamasaka
patent: 0 660 387 (1995-06-01), None
patent: 0 660 387 (1995-06-01), None
patent: 57-155331 (1982-09-01), None
patent: 63-128264 (1988-05-01), None
patent: 2-54814 (1990-02-01), None
patent: 05140613 (1993-06-01), None
patent: 5-273237 (1993-10-01), None
patent: 6-018560 (1994-01-01), None
patent: 6-289056 (1994-10-01), None
patent: 6-291167 (1994-10-01), None
patent: 0726772 (1995-05-01), None
patent: 7-209376 (1995-08-01), None
patent: 7-244074 (1995-09-01), None
patent: 8-50144 (1996-02-01), None
patent: 8-166407 (1996-06-01), None
patent: 8-292209 (1996-11-01), None
patent: 2000-147004 (2000-05-01), None
XP-00089949, Nadeau et al., “An Analysis of Tungsten Probes' Effect on Yields in a Production Wafer Probe Environment”, Proceedings of the International Test Conference, III Comp. Soc. Press, vol. Conf. 20, 1989, p. 208-215.
“Super-Thinning of Probe Card Tip”,Toshiba Technique Public Document,No. 95-0447, vol. 13-50, pp. 117-118, Jul. 24, 1995 (English language translation of excerpts thereof).
XP-002140401, Schliefer, Improving Wafer Sort Yields with Radius-Tip Probes, 1990, IEEE International Test Conference Proceedings, paper 39.2, pp. 869-899.
Japanese Patent Application JP-11241690 and English version of claims.
Kano Mutsumi
Kashiba Yoshihiro
Maekawa Shigeki
Miki Kazunobu
Nagata Takahiro
Burns Doane , Swecker, Mathis LLP
Cuneo Kamand
Mitsubishi Denki & Kabushiki Kaisha
Nguyen Jimmy
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