Test potential transfer circuit

Details Test potential transfer circuit Test potential transfer circuit

1997-06-24

1998-07-07

Yoo, Do Hyun

Static information storage and retrieval

Read/write circuit

Including level shift or pull-up circuit

365191, 365227, G11C 700

Patent

active

057779309

ABSTRACT:
A potential transfer circuit consists of a first pad, a second pad, a voltage detection circuit, a level shift circuit and a switching MOS transistor. The voltage detection circuit is connected to the first pad and detects a high voltage applied to the first pad and generates a control signal which is supplied to the level shift circuit. The level shift circuit receives the control signal and generates a drive signal which is in turn supplied to the gate of the MOS transistor, causing the MOS transistor to supply to a circuit under test a test signal supplied through the second pad to the drain of the MOS transistor. In preferred embodiments, the power supply of the level shift circuit is derived from the high voltage signal supplied to the first pad.

REFERENCES:
patent: 5369491 (1994-11-01), Han et al.
patent: 5428576 (1995-06-01), Furuyama

Affiliated with

Also associated with

Rating

Test potential transfer circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Test potential transfer circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Test potential transfer circuit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1213827