Test pattern for use monitoring variations of critical dimension

Details Test pattern for use monitoring variations of critical dimension Test pattern for use monitoring variations of critical dimension

1988-03-18

1989-09-05

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156626, 1566591, H01L 21306, H01L 21205, B44C 122, B05D 306

Patent

active

048635480

ABSTRACT:
An improved test pattern for monitoring variations of critical dimensions of patterns produced during the fabrication of semiconductor devices is disclosed. The test pattern which allows the critical dimensions to be easily monitored by a microscope, has a reference pattern including a reference line corresponding to one vertical edge of the reference pattern, said reference pattern formed flatly in a given layer below the present layer, a step shaped first pattern including a plurality of vertical indication step line segments corresponding to each vertical edge of the step and being formed flatly in the present layer, each extending line of said line segments being spaced by an equal horizontal interval and one of said line segments lying in the reference line, and a step shaped second pattern including a plurality of vertical indication step line segments corresponding to vertical edges of the step of the second pattern and being formed in separation from the first pattern in the present layer, each of said line segments of the second pattern being arranged on the extending line of each line segment of the first pattern.

REFERENCES:
patent: 4141780 (1979-02-01), Kleinknecht et al.
patent: 4650744 (1987-03-01), Amano

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