Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Patent
1997-01-02
1998-11-10
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
H01L 2358
Patent
active
058347950
ABSTRACT:
A test pattern for measuring a line width of an electrode includes a substrate; an electrode having a predetermined line width and length formed on the substrate; and, a plurality of lines extended from both ends of the electrode, whereby, first, a line width of a gate electrode in a transistor is measured accurately; second, a change in electrical characteristics of a transistor with respect to the change of the line width of a gate electrode during a fabrication process can be accurately revealed; third, comparison of changes in the line widths of a gate electrode during fabrication measured through an SEM and after completion of fabrication can be done easily; and fourth, a reliability of a completed device is easily assessable.
REFERENCES:
patent: 3974443 (1976-08-01), Thomas
patent: 4347479 (1982-08-01), Cullet
patent: 4516071 (1985-05-01), Buehler
patent: 4978923 (1990-12-01), Maltiel
patent: 5477062 (1995-12-01), Natsume
LG Semicon Co. Ltd.
Nguyen Cuong Quang
Thomas Tom
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