Test method for semiconductor memory device and...

Static information storage and retrieval – Read/write circuit – Testing

Reexamination Certificate

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C365S203000, C365S207000, C365S206000

Reexamination Certificate

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07633818

ABSTRACT:
The present invention detects a sense amplifier having an unbalanced characteristic. In a test method for a semiconductor memory device for detecting a sense amplifier having an unbalanced characteristic, an intermediate potential having different H and L levels from normal operation is restored in a first memory cell of a first bit line connected to a test target sense amplifier, charge quantity when the capacitance of the capacitor is small is virtually stored in the first memory cell, then the data of the first memory cell is read, and a malfunction of the sense amplifier is checked based on the presence of an error of read data.

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patent: WO 2004/079745 (2004-09-01), None
Li-Fu Chang, et al,“DRAM Bit-line Coupling Noise Analysis and Simulation of Process Sensitivity for COB Scheme,” Computational Electronics, 1998, IWCE-6, Extended Abstracts of 1998 Sixth International Workshop on Osaka, Japan, Oct. 19-21, 1998, Piscataway NJ, USA, IEEE, pp. 186-189.

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