Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2006-10-10
2006-10-10
Elms, Richard (Department: 2824)
Static information storage and retrieval
Read/write circuit
Testing
C365S230030, C365S200000
Reexamination Certificate
active
07120071
ABSTRACT:
A testing method for a semiconductor memory includes the steps of storing data in each of a plurality of memory cell blocks, electrically connecting two memory cell blocks with a sense amplifier shared by the two memory cell blocks of the plurality of memory cell blocks, sensing data of the two memory cells through the sense amplifier and determining whether the sensed data is normal based on a bit line capacitance increase according to the connection of the two memory cell blocks. The testing method can intentionally reduce an offset margin of a memory cell through increase of bit line capacitance, remove and screen an abnormal memory cell having a smaller capacitance and effectively decrease testing time.
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Elms Richard
Hur J. H.
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
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