Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2007-10-09
2007-10-09
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C324S762010
Reexamination Certificate
active
11066991
ABSTRACT:
A test key structure includes a substrate, a closed loop, a plurality of spacers, a plurality of first and second doping regions and a plurality of contacts. The closed loop having two conductive lines and two connection portions is located on the substrate. Each connection portion connects to one end of the conductive line and surrounds a contact region. The spacers are disposed at the edge of the closed loop to cover the substrate between the conductive lines. The first doping regions are located in the substrate outside the closed loop and the spacers. The second doping regions are located in the substrate under the spacers. The contacts are electrically connected to the first doping regions within the contact regions. Because the spacers and the conductive lines are incorporated into a test key structure, the influence of spacers upon the entire device can be more accurately determined.
REFERENCES:
patent: 6350636 (2002-02-01), Lee et al.
patent: 2003/0189204 (2003-10-01), Zatelli et al.
Chen Chuck
Gong Yo-Yi
Jung Le-Tien
J.C. Patents
Jackson Jerome
United Microelectronics Corp.
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