Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2007-01-16
2007-01-16
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Testing
C365S205000
Reexamination Certificate
active
10683636
ABSTRACT:
Post-manufacture compensation for a sensing offset can be provided, at least in part, by selectively exposing one of a pair of cross-coupled transistors in a sense amplifier to a bias voltage selected to cause a compensating shift in a characteristic of the exposed transistor. In designs susceptible to post-manufacture data dependent creep in a device characteristic, such exposure may be advantageously provided in situ by causing the sense amplifier to sense values purposefully skewed toward a predominate value selected to cause the compensating shift. In some realizations, an on-chip test block is employed to identify and characterize sensing mismatch. Typically, the techniques described herein may be employed to address sensing offsets that have developed post-manufacture due to a data-dependent effect. However, in some realizations, the techniques described herein may be used to address a sensing offset arising at least in part from other or additional sources.
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Eleyan, et al., U.S. Appl. No. 10/074,396, entitled “Mechanism to Minimize Failure in Differential Sense Amplifiers,” filed Feb. 11, 2002, pp. 22.
Eleyan, et al., U.S. Appl. No. 10/683,633, entitled “Measuring and Correcting Sense Amplifier and Memory Mismatches Using NBTI,” filed Oct. 10, 2003, pp. 31.
Eleyan Nadeem N.
Levy Howard L.
Su Jeffrey Y.
Dorsey & Whitney LLP
Le Thong Q.
Sun Microsystems Inc.
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