Terraced film stack

Details Terraced film stack Terraced film stack

2007-03-27

2008-12-23

Hoang, Quoc D (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S605000, C257SE27084

Reexamination Certificate

active

07468533

ABSTRACT:
A process and apparatus directed to forming a terraced film stack of a semiconductor device, for example, a DRAM memory device, is disclosed. The present invention addresses etch undercut resulting from materials of different etch selectivity used in the film stack, which if not addressed can cause device failure.

REFERENCES:
patent: 6200853 (2001-03-01), Iwasaki
patent: 2004/0253813 (2004-12-01), Son et al.
patent: 2005/0014334 (2005-01-01), Herner et al.
patent: 2007/0231995 (2007-10-01), Hanson et al.

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