Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2009-01-30
2011-11-22
Dang, Trung Q (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21168
Reexamination Certificate
active
08062977
ABSTRACT:
Heater elements made of high resistivity ternary and quaternary thin films containing three or more of W, C, O, N and Si are provided. The thin films have resistivities at least about 1000 μΩ-cm at 50 to 60 Angstroms. The ternary and quaternary films have improved stability over binary films on anneal. Methods of depositing the thin films are also provided. The methods involve depositing the film from an organometallic tungsten precursor under conditions such that a highly resistive, continuous film is formed.
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Ashtiani Kaihan
Battaglia Anna
Dixit Girish
Humayun Raashina
Rassiga Stefano
Dang Trung Q
Novellus Systems Inc.
Weaver Austin Villeneuve & Sampson LLP
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