Ternary storage dynamic RAM

Details Ternary storage dynamic RAM Ternary storage dynamic RAM

1993-07-08

1995-07-11

Nguyen, Viet Q.

Static information storage and retrieval

Systems using particular element

Ternary

36518901, G11B 509, G11C 700

Patent

active

054327350

ABSTRACT:
A memory apparatus using conventional DRAMs which uses a ternary representation of stored data. Each DRAM memory cell can thus store three states. The ternary storage memory apparatus includes a binary to ternary converter which receives a first number of binary bits of data during a write operation and generates a second lesser number of data values or voltages using a ternary representation. A second number of memory storage elements are coupled to the binary to ternary converter and store the respective voltage using the above ternary representation. During reads, a ternary to binary converter reads the voltages stored in the memory elements and converts these voltages into the original first number of binary bits that were originally written into the memory storage elements. This allows the use of existing DRAM while considerably increasing the DRAM's memory storage density.

REFERENCES:
patent: 4482927 (1984-11-01), Melbye et al.
patent: 4771404 (1988-09-01), Mano et al.
patent: 5148333 (1992-09-01), Shinpuku
patent: 5262984 (1993-11-01), Noguchi et al.

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