Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-29
2008-10-14
Tran, Long K (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S341000, C257S343000, C257S492000, C257S493000, C257SE29256, C257SE29257
Reexamination Certificate
active
07436025
ABSTRACT:
A semiconductor device10is provided. A first layer12has a first dopant type; a second layer14is provided over the first layer12; and a third layer16is provided over the second layer and has the first dopant type. A plurality of first and second semiconductor regions22, 24are within the third layer. The first semiconductor region22has the first dopant type, and the second semiconductor region24has the second dopant type. The first and second semiconductor regions22, 24are disposed laterally to one another in an alternating pattern to form a super junction, and the super junction terminates with a final second semiconductor region24, 24′ of the second dopant type.
REFERENCES:
patent: 6882023 (2005-04-01), Khemka et al.
patent: 6906381 (2005-06-01), Peyre-Lavigne et al.
patent: 6982459 (2006-01-01), Suzuki et al.
patent: 7276766 (2007-10-01), Tu et al.
patent: 2004/0207047 (2004-10-01), Khemka et al.
patent: 2006/0043434 (2006-03-01), Huang et al.
patent: 2004/042825 (2004-05-01), None
U.S. Appl. No. 11/390,796, filed Mar. 27, 2006, Khemka et al.
Udrea, T. et al., Ultra-high voltage device termination using 3D RESURF (Super-Junction) concept-experimental demonstration at 6.5 kV, Proceedings of 2001 International Symposium on Power Semiconductor Devices & IC, Osaka, pp. 129-132.
Bai, Y., et al., Junction Termination Techniques for Super Junction Devices, ISPSO May 22-25, 2000 Toulouse, France, pp. 257-261.
Zhu, R., et al., A 0.25-Micron Smart Power Technology Optimized For Wireless and Consumer Applications, Freescale Semiconductor, Inc.
Parthasaranthy, V., et al., A 0.25 uM CMOS based 70V smart power technology with deep trench for high-voltage isolation, Freescale Semiconductor, Inc.
International Search Report and Written Opinion.
Bose Amitava
Khemka Vishnu K.
Roggenbauer Todd C.
Zhu Ronghua
Freescale Semiconductor Inc.
Ingrassia Fisher & Lorenz P.C.
Tran Long K
LandOfFree
Termination structures for super junction devices does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Termination structures for super junction devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Termination structures for super junction devices will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3989756