Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-08
2006-08-08
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S328000, C257S329000, C257S330000, C257S331000, C257S332000, C257S333000, C257S334000, C257S336000, C257S337000, C257S338000, C257S339000, C257S340000, C257S341000, C257S342000, C257S343000
Reexamination Certificate
active
07087958
ABSTRACT:
In one embodiment of the invention, a semiconductor device set includes at least one trench-typed MOSFET and a trench-typed termination structure. The trench-typed MOSFET has a trench profile and includes a gate oxide layer in the trench profile, and a polysilicon layer on the gate oxide layer. The trench-typed termination structure has a trench profile and includes an oxide layer in the trench profile. A termination polysilicon layer with discrete features separates the termination polysilicon layer. An isolation layer covers the termination polysilicon layer and filling the discrete features. The trench-typed MOSFET and the trench-typed termination structure may be formed on a DMOS device including an N+ silicon substrate, an N epitaxial layer on the N+ silicon substrate, and a P epitaxial layer on the N epitaxial layer. The trench profiles of the trench-typed MOSFET and of the trench-typed termination structure may penetrate through the P epitaxial layer into the N epitaxial layer.
REFERENCES:
patent: 5614751 (1997-03-01), Yilmaz et al.
patent: 5877528 (1999-03-01), So
patent: 5895951 (1999-04-01), So et al.
patent: 5910669 (1999-06-01), Chang et al.
patent: 6031265 (2000-02-01), Hshieh
patent: 6043125 (2000-03-01), Williams et al.
patent: 6049108 (2000-04-01), Williams et al.
patent: 6309929 (2001-10-01), Hsu
patent: 6509608 (2003-01-01), Hueting
patent: 6657255 (2003-12-01), Hshieh et al.
patent: 6798018 (2004-09-01), Takaishi et al.
patent: 6803628 (2004-10-01), Hamada
patent: 6833583 (2004-12-01), In't Zandt et al.
patent: 6833584 (2004-12-01), Henninger et al.
patent: 2002/0195651 (2002-12-01), Miura et al.
patent: 2003/0080351 (2003-05-01), Hshieh et al.
patent: 2003/0178676 (2003-09-01), Henninger et al.
patent: 2004/0007723 (2004-01-01), Andoh et al.
patent: 2004/0056310 (2004-03-01), Probst
patent: 2004/0145015 (2004-07-01), Mo et al.
patent: 2005/0029557 (2005-02-01), Hatakeyama et al.
Chang Chien-Ping
Chuang Chiao-Shun
Hsieh Hsing-Huang
Tseng Mao-Song
Mosel Vitelic Inc.
Soward Ida M.
Townsend and Townsend / and Crew LLP
LandOfFree
Termination structure of DMOS device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Termination structure of DMOS device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Termination structure of DMOS device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3687759