Termination of the power stage of a monolithic semiconductor dev

Details Termination of the power stage of a monolithic semiconductor dev Termination of the power stage of a monolithic semiconductor dev

1991-05-29

1994-05-31

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257328, 257329, 257334, 257337, 257487, 257494, 257500, 257502, H01L 2970, H01L 2978

Patent

active

053171829

ABSTRACT:
A smart power integrated circuit, in which the power stage includes a vertical-current-flow NMOS power transistor having many paralleled cells. A deeper P-type diffusion surrounds the P-type body region of the cells at the edge of the power stage. The junction between this deep P-type diffusion and the laterally adjacent N-type material has a lower curvature than the junction which would be formed by the P-type body region alone. This increases the transistor's breakdown voltage without degrading the transistor's on-state resistance R.sub.on.

REFERENCES:
patent: 4345265 (1982-08-01), Blanchard
patent: 4589004 (1986-05-01), Yasuda et al.
Blicher, "Physics of Semiconductor Power Devices", Rep. Prog. Phys., vol. 45, pp. 446-450 (1982).
Microelectronics Journal vol. 20, No. 1-2, pp. 77-103 (1989) Rossel et al., "Smart Power and High Voltage Integrated Circuits and Related MOS Technologies".
Patent Abstracts of Japan vol. 7, No. 204 (E-197)(1349) Sep. 9, 1983 (JP-A-58-100-460).
Patent Abstracts of Japan vol. 12, No. 449 (E-686)(3296) Jul. 21, 1988 (JP-A-63-177-566).
Baliga, Modern Power Devices, pp. 263-274 (1987).

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