Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-16
2006-05-16
Lebentritt, Michael (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S331000, C257S332000, C257S333000, C257S334000, C257S520000
Reexamination Certificate
active
07045857
ABSTRACT:
A trench MIS device is formed in a P-epitaxial layer that overlies an N-epitaxial layer and an N+ substrate. In one embodiment, the device includes an N-type drain-drift region that extends from the bottom of the trench to the N-epitaxial layer. Preferably, the drain-drift region is formed at least in part by fabricating spacers on the sidewalls of the trench and implanting an N-type dopant between the sidewall spacers and through the bottom of the trench. The drain-drift region can be doped more heavily than the conventional “drift region” that is formed in an N-epitaxial layer. Thus, the device has a low on-resistance. The device can be terminated by a plurality of polysilicon-filled termination trenches located near the edge of the die, with the polysilicon in each termination trench being connected to the mesa adjacent the termination trench. The polysilicon material in each termination trenches.
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Chen Qufei
Darwish Mohamed N.
Qi Jainhai
Terrill Kyle W.
Pompey Ron
Silicon Valley Patent & Group LLP
Siliconix Incorporated
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