Termination for a superjunction device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S341000, C257S329000, C257S328000, C257S487000

Reexamination Certificate

active

07659588

ABSTRACT:
A superjunction device that includes a termination region having a transition region adjacent the active region thereof, the transition region including a plurality of spaced columns.

REFERENCES:
patent: 6441455 (2002-08-01), Dutta
patent: 6498368 (2002-12-01), Sakamoto et al.
patent: 6621122 (2003-09-01), Qu
patent: 6768170 (2004-07-01), Zhou
patent: 7166890 (2007-01-01), Sridevan
patent: 7492003 (2009-02-01), Kinzer
patent: 2003/0176031 (2003-09-01), Onishi et al.

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