Termination design for deep source electrode MOSFET

Details Termination design for deep source electrode MOSFET Termination design for deep source electrode MOSFET

2007-08-08

2009-08-25

Rose, Kiesha L (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29257, C257SE21418, C438S270000, C438S268000

Reexamination Certificate

active

07579650

ABSTRACT:
A power semiconductor device that includes a plurality of source trenches that extend to a depth below the gate electrodes and a termination region that includes a termination trench that is as deep as the source trenches.

REFERENCES:
patent: 6838735 (2005-01-01), Kinzer et al.
patent: 2006/0030142 (2006-02-01), Grebs et al.
patent: 2006/0060916 (2006-03-01), Girdhar et al.
International Search Report dated Feb. 13, 2008 issued in PCT Application No. PCT/US07/17744.

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