Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2007-08-27
2010-11-30
Vanore, David A (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492100, C250S492200, C250S492220, C250S492300, C174S11000P, C174S12000C, C174S1200SR, C361S816000
Reexamination Certificate
active
07842934
ABSTRACT:
Terminal structures of an ion implanter having insulated conductors with dielectric fins are disclosed. In one particular exemplary embodiment, the terminal structures of an ion implanter may be realized with insulated conductors with one or more dielectric fins. For example, the ion implanter may comprise an ion source configured to provide an ion beam. The ion implanter may also comprise a terminal structure defining a cavity, wherein the ion source may be at least partially disposed within the cavity. The ion implanter may further comprise an insulated conductor having at least one dielectric fin disposed proximate an exterior portion of the terminal structure to modify an electric field.
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Hermanson Eric
Krause Steve
Low Russell John
May Doug
Tekletsadik Kasegn D.
Maskell Michael
Vanore David A
Varian Semiconductor Equipment Associates Inc.
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