Teos plasma protection technology

Details Teos plasma protection technology Teos plasma protection technology

1995-12-29

1997-10-28

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566571, 216 38, 437228, H01L 2100

Patent

active

056814259

ABSTRACT:
An improved method of gap filling in the dielectric layer is described. Semiconductor device structures are formed in and on a semiconductor substrate and the top surface of the substrate is planarized. A conducting layer is deposited over the surface of the substrate and patterned. A layer of TEOS oxide is deposited over the patterned conducting layer by plasma enhanced chemical vapor deposition. While TEOS plasma residual remains on the wafer, the oxide is etched wherein the TEOS plasma protects the surface of the oxide layer. The combination of the TEOS deposition and etching processes results in a gap-filling dielectric.

REFERENCES:
patent: 4962063 (1990-10-01), Maydan et al.
patent: 5252516 (1993-10-01), Nguyen et al.
patent: 5270234 (1993-12-01), Huang et al.
patent: 5362686 (1994-11-01), Harada
patent: 5514624 (1996-05-01), Morozumi
patent: 5567661 (1996-10-01), Nishio et al.
"Improved Sub-Micron Inter-Metal Dielectric Gap-Filling Using TEOS/Ozone APCVD" by E. J. Korczynski et al. Jan. 1992, Microelectronic Manufacturing Technology.

Affiliated with

Also associated with

Rating

Teos plasma protection technology does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Teos plasma protection technology, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Teos plasma protection technology will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1023411