Tensile strain source using silicon/germanium in globally...

Details Tensile strain source using silicon/germanium in globally... Tensile strain source using silicon/germanium in globally...

2011-08-16

2011-08-16

Mandala, Victor (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S368000, C257S288000, C257SE27062, C257SE29255, C257SE21409, C438S285000, C438S275000

Reexamination Certificate

active

07999326

ABSTRACT:
By embedding a silicon/germanium mixture in a silicon layer of high tensile strain, a moderately high degree of tensile strain may be maintained in the silicon/germanium mixture, thereby enabling increased performance of N-channel transistors on the basis of silicon/germanium material. In other regions, the germanium concentration may be varied to provide different levels of tensile or compressive strain.

REFERENCES:
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patent: 2007/0029553 (2007-02-01), Ozturk et al.
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patent: 2007/0231983 (2007-10-01), Shifren et al.
patent: 2007/0252144 (2007-11-01), Peidous et al.
patent: 2008/0023692 (2008-01-01), Wirbeleit et al.
patent: WO 03/105233 (2003-12-01), None
Translation of Official Communication from German Patent Office for German Patent Application No. 10 2007 052 053.2 dated Jul. 17, 2008.

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