Template layer formation

Details Template layer formation Template layer formation

2007-04-24

2007-04-24

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S517000, C438S479000, C438S933000, C257SE21285, C257SE21564, C257SE21703

Reexamination Certificate

active

10919922

ABSTRACT:
A process for forming a strained semiconductor layer. The process includes implanting ions into a semiconductor layer prior to performing a condensation process on the layer. The ions assist in diffusion of atoms (e.g. germanium) in the semiconductor layer and to increase the relaxation of the semiconductor layer. After the condensation process, the layer can be used as a template layer for forming a strained semiconductor layer.

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