Temperature stable semiconductor bulk acoustic resonator

Details Temperature stable semiconductor bulk acoustic resonator Temperature stable semiconductor bulk acoustic resonator

1992-03-30

1994-02-01

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

257419, 257467, 310324, H01L 2966

Patent

active

052834581

ABSTRACT:
This invention discloses a semiconductor bulk acoustic resonator including at least one thin film piezoelectric layer positioned on a semiconductor substrate. The acoustic resonator includes a heating ring positioned around the outer perimeter of the piezoelectric layer in order to heat the piezoelectric layer to a desirable elevated temperature. A heat sensing film fabricated on the piezoelectric layer monitors the temperature of the piezoelectric layer such that the heating ring maintains the piezoelectric layer at a constant temperature. By this, an oscillator circuit using this semiconductor bulk acoustic resonator as the frequency controlling element can maintain a constant frequency over a wide range of temperatures which may affect frequency stability.

REFERENCES:
patent: 4556812 (1985-12-01), Kline et al.
patent: 4719383 (1988-01-01), Wang et al.
patent: 5023503 (1991-06-01), Legge et al.
Cushman, D. et al., "SBAR Filter Monolithically Integrated with HBT Amplifier", Proceedings 1990 IEEE Ultrasonics Symposium, pp. 1-6, 1990.
Wang, J. S. et al., "Low Temperature Coefficient Shear Wave Thin Films For Composite Resonators and Filters", IEEE Ultrasonic Symposium, 1983, pp. 3-6.

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