Temperature sensor calibration wafer structure and method of fab

Details Temperature sensor calibration wafer structure and method of fab Temperature sensor calibration wafer structure and method of fab

1994-01-12

1995-07-25

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

257537, 338308, H01L 3700

Patent

active

054364949

ABSTRACT:
An embodiment of the present invention relates to a semiconductor wafer structure, the wafer structure comprising: a semiconductor substrate; a plurality of temperature sensing elements (12) disposed over the semiconductor substrate, where temperature sensing elements (12) are fabricated so that an electrical characteristic of the temperature sensing element changes as the temperature of the wafer changes; and a plurality of interconnection lines (10, 14) connecting the temperature sensing elements (12) to external devices. In addition the semiconductor wafer structure includes a passivation layer which is deposited over the semiconductor substrate and the temperature sensing elements. The temperature sensing elements are comprised of a refractory conductor, the refractory conductor has a temperature dependent electrical resistivity and has a width much less than its length. The interconnection lines are comprised of a conductor, and the conductor has a width which is greater than the width of the refractory conductor of the temperature sensor conductor. One or more electrical characteristic of the temperature sensing elements changes with temperature. These electrical characteristic could be either: conductor resistance, dielectric capacitance, diode characteristics, or inductance.

REFERENCES:
patent: 4059774 (1977-11-01), Cahen
patent: 4696188 (1987-09-01), Higashi

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