Temperature-protected semiconductor switch

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Reexamination Certificate

active

06876043

ABSTRACT:
A temperature-protected semiconductor switch having a semiconductor switch element composed of a number of cells connected in parallel and an integrated reverse diode, and further having a temperature sensor wherein the semiconductor switch element and the temperature sensor are integrated together in a semiconductor body of a first conductivity type. Upon occurrence of an excess temperature, the temperature sensor generates a first signal. A charge carrier detector is also provided which generates a second signal given the occurrence of free charged carriers caused by the integrated reverse diode in the semiconductor body. The first and second signals are supplied to an evaluation means that, for examples, undertakes the shut-off of the semiconductor switch only in the case of a true excess temperature.

REFERENCES:
patent: 4730228 (1988-03-01), Einzinger et al.
patent: 5107216 (1992-04-01), Yabusaki et al.
patent: 5461252 (1995-10-01), Nakura et al.
patent: 5500547 (1996-03-01), Yamaguchi et al.
patent: 5521421 (1996-05-01), Furuhata
patent: 5726478 (1998-03-01), Gantioler et al.
patent: 6373100 (2002-04-01), Pages et al.
patent: 0 341 482 (1989-11-01), None
patent: 404186763 (1992-07-01), None
Charles H. Roth, Jr., Fundamentals of Logic Design 1992, West Publishing Company, Fourth Edition, p. 51.

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