Temperature optimization of a physical vapor deposition...

Details Temperature optimization of a physical vapor deposition... Temperature optimization of a physical vapor deposition...

2006-04-25

2006-04-25

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S656000, C438S675000, C438S676000

Reexamination Certificate

active

07033931

ABSTRACT:
A physical vapor deposition process for maintaining the wafer below a critical temperature. The rate at which material particles are sputtered from the target and thus deposited on the wafer is controllable in response to power supplied to the target. Maintaining a desired deposition rate maintains the wafer temperature below the critical temperature.

REFERENCES:
patent: 6193855 (2001-02-01), Gopalraja et al.
patent: 6660622 (2003-12-01), Chen et al.
patent: 6720261 (2004-04-01), Anderson et al.
Periodic Table of the Elements, Sargent-Welch Scientific Company, 1979.

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